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 (R)
STPS130
POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF(max) FEATURES AND BENEFITS

1A 30 V 150C 0.46 V SMA (JEDEC DO-214AC) STPS130A SMB (JEDEC DO-214AA) STPS130U

Very low forward voltage drop for less power dissipation Optimized conduction/reverse losses trade-off which means the highest yield in the applications Surface mount miniature packages Avalanche capability specified
DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMA and SMB, this device is especially intended for use in parallel with MOSFETs in synchronous rectification and low voltage secondary rectification. Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage
Table 2: Order Codes Part Number STPS130A STPS130U
Marking S130 G12
Value 30 7 TL = 130C = 0.5 tp = 10ms sinusoidal tp = 2s F = 1kHz square tp = 100s square tp = 1s Tj = 25C 1 45 1 1 1200 -65 to + 150 150 10000
Unit V A A A A A W C C V/s
1 dPt ot * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j - a ) dTj
August 2004
REV. 5
1/7
STPS130
Table 4: Thermal Resistance Symbol Rth(j-l) Junction to lead Parameter SMA SMB Value 30 23 Unit C/W
Table 5: Static Electrical Characteristics Symbol IR * Tests conditions Tj = 25C VR = VRRM Reverse leakage current Tj = 125C Tj = 25C VF ** Forward voltage drop Tj = 125C Tj = 25C Tj = 125C
Pulse test: ** tp = 5 ms, < 2% * tp = 380 s, < 2%
Parameter
Min.
Typ 1.5 0.37 0.45
Max. 10 10 0.55 0.46 0.63 0.55
Unit A mA
IF = 1A IF = 2A
V
To evaluate the conduction losses use the following equation: P = 0.37 x IF(AV) + 0.090 I F (RMS)
2
Figure 1: Average forward power dissipation versus average forward current
PF(AV)(W)
0.6
Figure 2: Average forward current versus ambient temperature ( = 0.5)
IF(AV)(A)
1.2
= 0.05
0.5 0.4 0.3 0.2
= 0.1
= 0.2
= 0.5
1.0
Rth(j-a)=Rth(j-I)
=1
0.8
Rth(j-a)=100C/W
0.6 0.4
T
0.1
T
0.2
IF(AV)(A)
0.0 0.0 0.2 0.4 0.6 0.8
=tp/T
1.0
tp
0.0
1.2
=tp/T
0 25
tp
50
Tamb(C)
75 100 125 150
Figure 3: Normalized avalanche derating versus pulse duration
PARM(tp) PARM(1s)
1
power
Figure 4: Normalized avalanche derating versus junction temperature
PARM(tp) PARM(25C)
1.2 1
power
0.1
0.8 0.6
0.01
0.4 0.2
0.001 0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 25 50 75 100 125 150
2/7
STPS130
Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA)
IM(A)
8 7 6 5 4 3
Ta=100C Ta=50C Ta=75C
Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB)
IM(A)
8 7 6 5
Ta=50C
4
Ta=75C
3
IM t
2 1 0 1.0E-3
2
IM
Ta=100C
t
1
=0.5
t(s)
1.0E-2 1.0E-1 1.0E+0 0 1.0E-3
=0.5
t(s)
1.0E-2 1.0E-1 1.0E+0
Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMA)
Zth(j-c)/Rth(j-c)
1.0
Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMB)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.8
0.6
= 0.5
0.6
= 0.5
0.4
= 0.2
0.4
T
0.2
= 0.2 = 0.1 Single pulse
T
0.2
= 0.1 Single pulse
tp(s)
1E-1 1E+0 1E+1
0.0 1E-2
=tp/T
1E+2
tp
1E+3
tp(s)
1.0E-1 1.0E+0 1.0E+1
0.0 1.0E-2
=tp/T
1.0E+2
tp
1.0E+3
Figure 9: Reverse leakage current versus reverse voltage applied (typical values)
IR(A)
5E+3 1E+3
Tj=125C
Figure 10: Junction capacitance versus reverse voltage applied (typical values)
C(pF)
500
F=1MHz Tj=25C
200
1E+2
Tj=70C
100
1E+1
50
1E+0
Tj=25C
20
1E-1 0 5 10
VR(V)
15 20 25 30
VR(V)
10 1 2 5 10 20 30
3/7
STPS130
Figure 11: Forward voltage drop versus forward current (maximum values)
Figure 12: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) (SMA)
Rth(j-a)(C/W)
120
P=1.5W
IFM(A)
10.00
100
1.00
Tj=75C
80
Tj=25C
Tj=125C
60 40 20
0.10
VFM(V)
0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2
S(Cu)(cm)
0 0 1 2 3 4 5
Figure 13: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) (SMB)
Rth(j-a)(C/W)
140 120 100 80 60 40 20
P=1.5W
S(Cu)(cm)
0 0 1 2 3 4 5
4/7
STPS130
Figure 14: SMA Package Mechanical Data DIMENSIONS
E1
REF.
Millimeters Min. Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60
Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063
D
A1 A2 b
1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75
E
c
A1
E E1
b
C L
A2
D L
Figure 15: SMA Foot Print Dimensions (in millimeters)
1.65
1.45
2.40
1.45
5/7
STPS130
Figure 16: SMB Package Mechanical Data DIMENSIONS
E1
REF.
Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60
Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063
D
A1 A2 b
1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75
E
c
A1
E E1
b
C L
A2
D L
Figure 17: SMB Foot Print Dimensions (in millimeters)
2.3
1.52
2.75
1.52
6/7
STPS130
Table 6: Ordering Information Ordering type STPS130A STPS130U

Marking S130 G12
Package SMA SMB
Weight 0.068 g 0.107 g
Base qty 5000 2500
Delivery mode Tape & reel Tape & reel
Band indicates cathode Epoxy meets UL94, V0
Table 7: Revision History Date Jul-2003 Aug-2004 Revision 4A 5 Description of Changes Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080).
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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